MF152900 - SEMI MF1529 - Test Method for Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure Revision:SEMI MF1529-1104 - Superseded SEMI MF1535 –– Test Method

SEMI MF1535 –– Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance

1-0211 (Reapproved 0623)

SEMI MF523 — Practice for Unaided Visual Inspections of Polished Silicon Wafer Surfaces

SEMI E40 — Standard for Processing Management

SEMI MF1811-0309 (technical revision)

MF152900 - SEMI MF1529 - Test Method for Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure Revision:SEMI MF1529-1104 - Superseded SEMI MF1535 –– Test MethodThe sheet resistance of epitaxial, implanted, diffused or deposited films is an important materials acceptance and process control parameter. The uniformity across a wafer of the sheet resistance resulting from any of these processes is important for the equivalence of performance of devices or circuits made from various regions of the wafer. This Test Method uses a four point probe in a manner different from that of other ASTM methods for the